EFFECTS OF IN AND SB DOPING IN LPE GROWTH THERMODYNAMICS AND IN GAAS LAYER QUALITIES

被引：6

作者：

CHEN, JF

WIE, CR

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1989年 / 18卷 / 03期

关键词：

D O I：

10.1007/BF02657989

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：399 / 406

页数：8

共 21 条

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