ANISOTYPE, ENHANCEMENT-MODE, HETEROJUNCTION GATE FIELD-EFFECT TRANSISTORS

被引：2

作者：

LIN, CL ^{[1
]}

WIEDER, HH ^{[1
]}

ZULEEG, R ^{[1
]}

机构：

[1] MCDONNELL DOUGLAS ELECTR SYST CO,HUNTINGTON BEACH,CA 92647

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 13期

关键词：

Fieldeffect; Semiconductor devices and materials; transistors;

D O I：

10.1049/el:19900554

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Anisotype, p+-GaAs/«-In0. uGa0. 8SAs heterojunction fieldeffect transistors, grown by molecular beam epitaxy and fabricated by a self-aligned process, have been investigated for digital logic applications. Peak transconductance of 411 mS/mm and a K-value of 292 mA/V2/mm were obtained for an enhancement-mode device with gate length of 1 fan. Preliminary analysis of a nonisolated device leads to a cut off frequency of 17-5 GHz. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：846 / 847

页数：2

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