EMISSION COEFFICIENTS FOR ELECTRON AND HOLE TRAPS IN SILICON

被引：7

作者：

CHEN, JW ^{[1
]}

MILNES, AG ^{[1
]}

机构：

[1] CARNEGIE MELLON UNIV,DEPT ELECT ENGN,PITTSBURGH,PA 15213

来源：

SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 07期

关键词：

D O I：

10.1016/0038-1101(79)90146-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：684 / 686

页数：3

共 34 条

[11] IMPURITY STATES IN COBALT-DOPED SILICON [J].

EVWARAYE, AO .

JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (03) :383-401

[12] ELECTRON-IRRADIATION DAMAGE IN ANTIMONY-DOPED SILICON [J].

EVWARAYE, AO .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) :734-738

[13] ELECTRON TRAP ANNEALING IN NEUTRON TRANSMUTATION DOPED SILICON [J].

GULDBERG, J .

APPLIED PHYSICS LETTERS, 1977, 31 (09) :578-579

[14] THERMAL IONIZATION RATES AND ENERGIES OF HOLES AT DOUBLE ACCEPTOR ZINC CENTERS IN SILICON [J].

HERMAN, JM ;

SAH, CT .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (02) :405-415

[15]

HOPKINS RH, 1978, 10 WEST Q RES REP

[16] RHODIUM AND IRIDIUM AS DEEP IMPURITIES IN SILICON [J].

LISIAK, KP ;

MILNES, AG .

SOLID-STATE ELECTRONICS, 1976, 19 (02) :115-119

[17] PLATINUM AS A LIFETIME-CONTROL DEEP IMPURITY IN SILICON [J].

LISIAK, KP ;

MILNES, AG .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5229-5235

[18] RECOMBINATION CENTERS IN ALUMINUM-DOPED SILICON DIFFUSED IN HIGH PHOSPHORUS CONCENTRATION [J].

MARCHAND, RL ;

STIVERS, AR ;

SAH, CT .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (06) :2576-2580

[19] THERMAL EMISSION RATES AND ACTIVATION-ENERGIES OF ELECTRONS AT TANTALUM CENTERS IN SILICON [J].

MIYATA, K ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1976, 19 (07) :611-613

[20] FAST TRANSIENT CAPACITANCE MEASUREMENTS FOR IMPLANTED DEEP LEVELS IN SILICON [J].

NAGASAWA, K ;

SCHULZ, M .

APPLIED PHYSICS, 1975, 8 (01) :35-42

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