SUPPRESSION OF OXIDATION-INDUCED STACKING-FAULT FORMATION IN SILICON BY HIGH-PRESSURE STEAM OXIDATION

被引：10

作者：

TSUBOUCHI, N

MIYOSHI, H

ABE, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷

关键词：

D O I：

10.7567/JJAPS.17S1.223

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：223 / 228

页数：6

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共 12 条

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