SIMULATION OF DEEP-SUBMICRON SOI N-MOSFET CONSIDERING THE VELOCITY OVERSHOOT EFFECT

被引：6

作者：

CHOI, WS

ASSADERAGHI, F

PARK, YJ

MIN, HS

HU, CM

DUTTON, RW

机构：

[1] SEOUL NATL UNIV,INTERUNIV SEMICOND RES CTR,SEOUL 151742,SOUTH KOREA

[2] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

[3] STANFORD UNIV,CTR INTEGRATED SYST,STANFORD,CA 94305

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 07期

关键词：

D O I：

10.1109/55.388725

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A set of numerical simulations were performed on 0.12 mu m SOI MOSFET's with relatively uniform channel field and charge using the hydrodynamic model, the energy transport model, and the drift-diffusion model. The simulation results based on the advanced models (hydrodynamic and energy transport) show nearly identical results for the I-V characteristics and they agreed quite well with the experimental results, while the results from drift-diffusion model do not. Also the simulation results show that both the hydrodynamic and energy transport models handle the effect of velocity overshoot on the I-V characteristic of the 0.12 mu m device well.

引用

收藏

页码：333 / 335

页数：3

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