THERMALLY STABLE OHMIC CONTACTS TO N-TYPE GAAS .5. METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH NILNW OHMIC CONTACTS

被引：16

作者：

MURAKAMI, M ^{[1
]}

PRICE, WH ^{[1
]}

GREINER, JH ^{[1
]}

FEDER, JD ^{[1
]}

PARKS, CC ^{[1
]}

机构：

[1] IBM CORP,E FISHKILL HIGH PERFORMANCE ASSURANCE,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 09期

关键词：

D O I：

10.1063/1.342629

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3546 / 3551

页数：6

共 18 条

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