INAS A1SB DOUBLE-BARRIER STRUCTURE WITH LARGE PEAK-TO-VALLEY CURRENT RATIO - A CANDIDATE FOR HIGH-FREQUENCY MICROWAVE DEVICES

被引：35

作者：

SODERSTROM, JR ^{[1
]}

CHOW, DH ^{[1
]}

MCGILL, TC ^{[1
]}

机构：

[1] CALTECH,TJ WATSON SR LAB APPL PHYS,PASADENA,CA 91125

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 01期

关键词：

D O I：

10.1109/55.46920

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report negative differential resistance (NDR) in InAs/ AlSb/InAs/AlSb/InAs double-barrier structures with peak-to-valley current (PVC) ratios as large as 11 (28) at room temperature (77 K). This is a large improvement over previous results for these materials, and also considerably better than those obtained for the extensively studied GaAs/ AlGaAs material system. We have also improved the peak current density by reducing the barrier thickness and observed values exceeding 105 A/ cm2. These results suggest that InAs/AlSb structures are interesting alternatives to conventional GaAs/AlGaAs structures in high-frequency devices. We also report NDR in a InAs/AlSb superlattice double-barrier structure, with a lower PVC ratio than in the solid barrier case. This result indicates that valley current contributions arising from Y-point tunneling are negligible in these structures, consistent with the large band offset. © 1990 IEEE

引用

页码：27 / 29

页数：3

共 14 条

[1] NEGATIVE DIFFERENTIAL RESISTANCE IN ALGASB/INAS SINGLE-BARRIER HETEROSTRUCTURES AT ROOM-TEMPERATURE [J].

BERESFORD, R ;

LUO, LF ;

WANG, WI .

APPLIED PHYSICS LETTERS, 1989, 54 (19) :1899-1901

[2] OSCILLATIONS UP TO 420 GHZ IN GAAS/ALAS RESONANT TUNNELING DIODES [J].

BROWN, ER ;

SOLLNER, TCLG ;

PARKER, CD ;

GOODHUE, WD ;

CHEN, CL .

APPLIED PHYSICS LETTERS, 1989, 55 (17) :1777-1779

[3] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].

CHANG, LL ;

ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

[4] FABRICATION OF 200-GHZ FMAX RESONANT-TUNNELING DIODES FOR INTEGRATED-CIRCUIT AND MICROWAVE APPLICATIONS [J].

DIAMOND, SK ;

OZBAY, E ;

RODWELL, MJW ;

BLOOM, DM ;

PAO, YC ;

WOLAK, E ;

HARRIS, JS .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (03) :104-106

[5]

GULATIERI GJ, 1986, APPL PHYS LETT, V49, P1037

[6]

GULATIERI GJ, 1987, J APPL PHYS, V61, P5337

[7] ALGAAS/GAAS DOUBLE BARRIER DIODES WITH HIGH PEAK-TO-VALLEY CURRENT RATIO [J].

HUANG, CI ;

PAULUS, MJ ;

BOZADA, CA ;

DUDLEY, SC ;

EVANS, KR ;

STUTZ, CE ;

JONES, RL ;

CHENEY, ME .

APPLIED PHYSICS LETTERS, 1987, 51 (02) :121-123

[8] RESONANT TUNNELING IN ALSB/INAS/ALSB DOUBLE-BARRIER HETEROSTRUCTURES [J].

LUO, LF ;

BERESFORD, R ;

WANG, WI .

APPLIED PHYSICS LETTERS, 1988, 53 (23) :2320-2322

[9] INELASTIC TUNNELING IN (111) ORIENTED ALAS GAAS ALAS DOUBLE-BARRIER HETEROSTRUCTURES [J].

LUO, LF ;

BERESFORD, R ;

WANG, WI ;

MENDEZ, EE .

APPLIED PHYSICS LETTERS, 1989, 54 (21) :2133-2135

[10] ELECTRICAL-PROPERTIES AND BAND OFFSETS OF INAS/ALSB N-N ISOTYPE HETEROJUNCTIONS GROWN ON GAAS [J].

NAKAGAWA, A ;

KROEMER, H ;

ENGLISH, JH .

APPLIED PHYSICS LETTERS, 1989, 54 (19) :1893-1895

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