INFLUENCE OF H ON THE RECRYSTALLIZATION OF AMORPHOUS SI LAYERS

被引：11

作者：

OBERLIN, JC ^{[1
]}

CHAMI, AC ^{[1
]}

LIGEON, E ^{[1
]}

PRUNIER, C ^{[1
]}

机构：

[1] CEN, DRF, SPH, PSC, F-38041 GRENOBLE, FRANCE

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 19-20卷

关键词：

D O I：

10.1016/S0168-583X(87)80091-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：462 / 465

页数：4

共 11 条

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APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 29 (03) :147-149

[2] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].

CSEPREGI, L ;

KENNEDY, EF ;

MAYER, JW ;

SIGMON, TW .

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[3] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J].

KENNEDY, EF ;

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4241-4246

[4] EFFECT OF PRESSURE ON THE SOLID-PHASE EPITAXIAL REGROWTH RATE OF SI [J].

NYGREN, E ;

AZIZ, MJ ;

TURNBULL, D ;

POATE, JM ;

JACOBSON, DC ;

HULL, R .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :232-233

[5] SOME THERMODYNAMIC PROPERTIES OF AMORPHOUS SI [J].

POATE, JM .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :211-217

[6]

Quere Y., 1967, DEFAUTS PONCTUELS ME

[7] EFFECTS OF ELECTRICALLY ACTIVE IMPURITIES ON THE EPITAXIAL REGROWTH RATE OF AMORPHIZED SILICON AND GERMANIUM [J].

SUNI, I ;

GOLTZ, G ;

NICOLET, MA ;

LAU, SS .

THIN SOLID FILMS, 1982, 93 (1-2) :171-178

[8] SOLID-STATE EPITAXIAL-GROWTH OF DEPOSITED SI FILMS [J].

VONALLMEN, M ;

LAU, SS ;

MAYER, JW ;

TSENG, WF .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :280-282

[9] ROLE OF ELECTRONIC PROCESSES IN EPITAXIAL RECRYSTALLIZATION OF AMORPHOUS-SEMICONDUCTORS [J].

WILLIAMS, JS ;

ELLIMAN, RG .

PHYSICAL REVIEW LETTERS, 1983, 51 (12) :1069-1072

[10] EXO-DIFFUSION OF HYDROGEN IN AMORPHOUS-SILICON [J].

ZELLAMA, K ;

GERMAIN, P ;

SQUELARD, S ;

MONGE, J ;

LIGEON, E .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :225-230

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