TEMPERATURE AND DIFFUSION EFFECTS IN PREFERENTIAL SPUTTERING OF CRSI2

被引:10
作者
FERNANDEZ, R
SHRETER, U
NICOLET, MA
机构
来源
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期
关键词
Diffusion - Ion beams - Thermal effects;
D O I
10.1016/0167-5087(83)90847-5
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Backscattering spectrometry was used to investigate composition changes and sputtering yields of the chromium silicide as a function of temperature. Objective was to determine if the onset of enhanced diffusion, as it has been observed in ion mixing of a thin Cr film on Si, has any effect on subsurface composition and sputtering yields of CrSi//2. Backscattering spectrometry is also used to obtain angular distributions of sputtered fluxes from carbon catcher foils used during irradiations. Yields obtained from angular distributions are compared with yields obtained from changes in the areal densities of sputtered targets.
引用
收藏
页码:513 / 519
页数:7
相关论文
共 12 条
[1]   RADIATION EFFECTS ON SOLID-STATE DIFFUSION [J].
ADDA, Y ;
BEYELER, M ;
BREBEC, G .
THIN SOLID FILMS, 1975, 25 (01) :107-156
[2]   PHASE FORMATION IN CR-SI THIN-FILM INTERACTIONS [J].
COLGAN, EG ;
TSAUR, BY ;
MAYER, JW .
APPLIED PHYSICS LETTERS, 1980, 37 (10) :938-940
[3]   RADIATION ENHANCED DIFFUSION IN SOLIDS [J].
DIENES, GJ ;
DAMASK, AC .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (12) :1713-1721
[4]   DIFFUSION ENHANCEMENT DUE TO LOW-ENERGY ION-BOMBARDMENT DURING SPUTTER ETCHING AND DEPOSITION [J].
ELTOUKHY, AH ;
GREENE, JE .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4444-4452
[6]   SPUTTERING OF PTSI [J].
LIAU, ZL ;
MAYER, JW ;
BROWN, WL ;
POATE, JM .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) :5295-5305
[7]   SURFACE-LAYER COMPOSITION CHANGES IN SPUTTERED ALLOYS AND COMPOUNDS [J].
LIAU, ZL ;
BROWN, WL ;
HOMER, R ;
POATE, JM .
APPLIED PHYSICS LETTERS, 1977, 30 (12) :626-628
[8]   ION-INDUCED SILICIDE FORMATION IN NIOBIUM THIN-FILMS [J].
MATTESON, S ;
ROTH, J ;
NICOLET, MA .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (3-4) :217-226
[9]   ION-BEAM-INDUCED REACTIONS IN METAL-SEMICONDUCTOR AND METAL-METAL THIN-FILM STRUCTURES [J].
MAYER, JW ;
TSAUR, BY ;
LAU, SS ;
HUNG, LS .
NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :1-13
[10]   FORMATION KINETICS OF CRSI2 FILMS ON SI SUBSTRATES WITH AND WITHOUT INTERPOSED PD2SI LAYER [J].
OLOWOLAFE, JO ;
NICOLET, MA ;
MAYER, JW .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5182-5186